SGW50N60HS

高速IGBT在NPT技术下的Eoff 30 ％，相比上一代 High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation

•30% lower Eoffcompared to previous generation

•Short circuit withstand time – 10 µs

•Designed for operation above 30 kHz

•NPT-Technology for 600V applications offers:

\- parallel switching capability

\- moderate Eoffincrease with temperature

\- very tight parameter distribution

• High ruggedness, temperature stable behaviour

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC1 for target applications

安富利:
Trans IGBT Chip N-CH 600V 100A 3-Pin TO-247 Tube

Chip1Stop:
Trans IGBT Chip N-CH 600V 100A 3-Pin3+Tab TO-247 Tube

TME:
Transistor: IGBT; 600V; 50A; 416W; TO247

儒卓力:
**IGBT 600V 100A 3.15V TO247-3 **

Win Source:
High Speed IGBT in NPT-technology