IRLML6402TR

IRLML6402TR P沟道MOS场效应管 -3.7A 0.065ohm SOT-23 marking/标记 EC/E4/E1/EB/E7/E3 超低导通电阻 薄型封装

最大源漏极电压VdsDrain-Source Voltage| \---|--- 最大栅源极电压Vgs±Gate-Source Voltage| -12V 最大漏极电流IdDrain Current| -3.7A 源漏极导通电阻RdsDrain-Source On-State Resistance| 0.065Ω @-3.7A,-4.5V 开启电压Vgs（th）Gate-Source Threshold Voltage| -0.40--0.95V 耗散功率PdPower Dissipation| 1.3W Description & Applications| Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching 描述与应用| 超低导通电阻 P沟道MOSFET SOT-23的脚印 薄型（高度<1.1mm） 可在磁带和卷轴 快速切换

艾睿:
Trans MOSFET P-CH Si 20V 3.7A 3-Pin SOT-23 T/R

Verical:
Trans MOSFET P-CH Si 20V 3.7A 3-Pin SOT-23 T/R

DeviceMart:
P-Channel MOSFET, 고속스위칭, SOT-23 초소형 패키지, Vd = -20V, Rds = 0.065Ω, Id = -3,7A, SOT-23패키지