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VND3NV0413TR

OMNIFET II完全autoprotected功率MOSFET OMNIFET II fully autoprotected Power MOSFET

Description

The VNN3NV04, VNS3NV04, VND3NV04 VND3NV04-1, are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications.

Features

■ Linear current limitation

■ Thermal shutdown

■ Short circuit protection

■ Integrated clamp

■ Low current drawn from input pin

■ Diagnostic feedback through input pin

■ ESD protection

■ Direct access to the gate of the Power MOSFET analog driving

■ Compatible with standard Power MOSFET in compliance with the 2002/95/EC European Directive

VND3NV0413TR PDF数据文档
图片 型号 厂商 下载
VND3NV0413TR ST Microelectronics 意法半导体
VND3NV04-E ST Microelectronics 意法半导体
VND3NV04-1 ST Microelectronics 意法半导体
VND3NV04 ST Microelectronics 意法半导体
VND3NV04-1-E ST Microelectronics 意法半导体
VND3NV04TR-E ST Microelectronics 意法半导体