BF493SG

高压晶体管PNP硅 High Voltage Transistor PNP Silicon

Features

•This is a Pb−Free Device

.

得捷:
TRANS PNP 350V 0.5A TO92

艾睿:
The versatility of this PNP BF493SG GP BJT from ON Semiconductor makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 625 mW. This product comes packaged in bulk, so the parts will be stored loosely. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 350 V and a maximum emitter base voltage of 6 V.

Chip1Stop:
Trans GP BJT PNP 350V 0.5A 3-Pin TO-92 Bulk

TME:
Transistor: PNP; bipolar; 350V; 500mA; 625mW; TO92

Win Source:
TRANS PNP 350V 0.5A TO92 / Bipolar BJT Transistor PNP 350 V 500 mA 50MHz 625 mW Through Hole TO-92 TO-226