ADG1219

低电容，低电荷注入， 【 15 V / 12 V iCMOS⑩ SPDT采用SOT -23 Low Capacitance, Low Charge Injection, 【15 V/12 V iCMOS⑩ SPDT in SOT-23

Product Details

The is a monolithic _i_CMOS® device containing an SPDT switch. An EN input is used to enable or disable the device. When disabled, all channels are switched off. When on, each channel conducts equally well in both directions and has an input signal range that extends to the supplies. Each switch exhibits break-before-make switching action.

The _i_CMOS industrial CMOS modular manufacturing process combines high voltage complementary metal-oxide semiconductor CMOS and bipolar technologies. It enables the development of a wide range of high performance analog ICs capable of 33 V operation in a footprint that no other generation of high voltage parts has been able to achieve. Unlike analog ICs using conventional CMOS processes, _i_CMOS components can tolerate high supply voltages while providing increased performance, dramatically lower power consumption, and reduced package size.

The ultralow capacitance and exceptionally low charge injection of these multiplexers make them ideal solutions for data acquisition and sample-and-hold applications, where low glitch and fast settling are required. Figure 2 shows that there is minimum charge injection over the entire signal range of the device. _i_CMOS construction also ensures ultralow power dissipation, making the parts ideally suited for portable and battery-powered instruments.

**Applications**

* Automatic test equipment

* Data acquisition systems

* Battery-powered systems

* Sample-and-hold systems

* Audio/video signal routing

* Communication systems

### Features and Benefits

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<0.5 pC charge injection over full signal range

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2.5 pF off capacitance

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Low leakage; 0.6 nA maximum @ 85°C

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120 Ω on resistance

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Fully specified at +12 V, ±15 V

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No VL supply required

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3 V logic-compatible inputs

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Rail-to-rail operation

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8-lead SOT-23 package

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