GT15J321

Trans IGBT Chip N-CH 600V 15A 3Pin3+Tab TO-220NIS

High Power Switching Applications

Fast Switching Applications

• Fourth-generation IGBT

• Fast switching FS

• Enhancement mode type

• High speed: tf = 0.03 μs typ.

• Low saturation Voltage: VCE sat = 1.90 V typ.

• FRD included between emitter and collector

艾睿:
Trans IGBT Chip N-CH 600V 15A 3-Pin3+Tab TO-220NIS

Chip1Stop:
Trans IGBT Chip N-CH 600V 15A 3-Pin3+Tab TO-220NIS

Win Source:
High Power Switching Applications Fast Switching Applications