BAR81W

硅射频开关二极管 Silicon RF Switching Diode

反向电压VrReverse Voltage| 30V \---|--- 平均整流电流IoAverage Rectified Current| 100mA/0.1A 最大正向压降VFForward VoltageVf | 930mV/0.93V 反向恢复时间TrrReverse Recovery Time| 80ns 最大耗散功率PdPower Dissipation| Description & Applications| FeAtures •Silicon RF Switching Diode •Designed for use in shunt configurAtion in high performAnce RF switches •High shunt signAl isolAtion •Low shunt insertion loss •Optimized for short - open trAnsformAtion using  lines 描述与应用| 特点 •硅射频开关二极管 •设计用于分流配置高性能RF开关 •高并联信号隔离器 •分流插入损耗低 •优化短 - 开放转型线