DSS3540M-7B

TRANS PNP 40V 500mA DFN1006-3

Bipolar BJT Transistor PNP 40V 500mA 100MHz 250mW Surface Mount 3-X1DFN1006

得捷:
TRANS PNP 40V 0.5A DFN1006-3

艾睿:
This specially engineered PNP DSS3540M-7B GP BJT from Diodes Zetex comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 250 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

Chip1Stop:
Trans GP BJT PNP 40V 0.5A 3-Pin DFN T/R

Verical:
Trans GP BJT PNP 40V 0.5A 250mW 3-Pin DFN T/R

Win Source:
TRANS PNP 40V 0.5A DFN1006-3

DeviceMart:
TRANS PNP 40V 500MA DFN1006-3