2N5883

互补硅大功率晶体管 Complementary Silicon High−Power Transistors

The Power 25A 80 V Bipolar NPN Transistor is designed for general-purpose power amplifier and switching applications.

Features

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Low Collector-Emitter Saturation Voltage

VCEsat = 1.0 Vdc, max at IC = 15 Adc

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Low Leakage Current

ICEX = 1.0 mAdc max at Rated Voltage

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Excellent DC Current Gain

hFE = 20 min at IC = 10 Adc

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High Current Gain Bandwidth Product

ft = 4.0 MHz min at IC = 1.0 Adc

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Pb-Free Packages are Available