JANTXV2N5339

Trans GP BJT NPN 100V 5A 3Pin TO-39

FEATURES: ? PNP MEDIUM POWER SILICON TRANSISTOR ? Qualified per MIL-PRF-19500/561

艾睿:
Microsemi has the solution to your circuit&s;s high-voltage requirements with their NPN JANTXV2N5339 general purpose bipolar junction transistor. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 1000 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 6 V.

Verical:
Trans GP BJT NPN 100V 5A 1000mW 3-Pin TO-39 Bag