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FQI13N50CTU

Trans MOSFET N-CH 500V 13A 3Pin3+Tab I2PAK Rail

Description

This N-Channel enhancement mode power MOSFET is produced using Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies,

active power factor correction PFC, and electronic lamp ballasts.

Features

• 13 A, 500 V, RDSon= 480 mΩMax. @VGS= 10 V, ID= 6.5 A

• Low Gate Charge Typ. 43 nC

• Low Crss Typ. 20 pF

• 100% Avalanche Tested

• RoHS Compliant

FQI13N50CTU PDF数据文档
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