AIGW40N65F5XKSA1
单晶体管, IGBT, 74 A, 1.6 V, 250 W, 650 V, TO-247, 3 引脚
Summary of Features:
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- 650V blocking voltage
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- Max junction temperature 175°C
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- Very low conduction and switching losses
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- Very low junction and case temperature
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- High power density design
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- Positive temperature coefficient in V CEsat
Benefits:
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- 50V higher blocking voltage
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- Highest efficiency
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- High device reliability
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- Low temperature leads to less cooling efforts
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- Less system costs
Target Applications:
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- Fast switching automotive applications
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- On-board charger
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- PFC
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- DC-DC converter
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- DC-AC converter
