APT35GA90B

高速PT IGBT High Speed PT IGBT

This powerful and secure IGBT transistor from will make sure your circuit works properly. It has a maximum collector emitter voltage of 900 V. Its maximum power dissipation is 290000 mW. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.