TN2510N8-G

晶体管, MOSFET, N沟道, 730 mA, 100 V, 1 ohm, 10 V, 2 V

This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex"s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.

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Low threshold 2.0V max.

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High input impedance

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Low input capacitance 125pF max.

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Fast switching speeds

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Low on-resistance

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Free from secondary breakdown

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Low input and output leakage