IXTH10P60

通孔 P 通道 600V 10A（Tc） 300W（Tc） TO-247（IXTH）

P-Channel 600V 10A Tc 300W Tc Through Hole TO-247 IXTH

得捷:
MOSFET P-CH 600V 10A TO247

贸泽:
MOSFET -10 Amps -600V 1 Rds

艾睿:
Compared to traditional transistors, IXTH10P60 power MOSFETs, developed by Ixys Corporation, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 300000 mW. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.

Chip1Stop:
Trans MOSFET P-CH Si 600V 10A 3-Pin3+Tab TO-247AD

Verical:
Trans MOSFET P-CH Si 600V 10A 3-Pin3+Tab TO-247AD