SI7119DN-T1-GE3
VISHAY SI7119DN-T1-GE3. 场效应管, MOSFET, P沟道, -200V, 3.8A, POWERPAK
The is a 200VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for active clamp in intermediate DC-to-DC power supplies applications.
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- Low thermal resistance PowerPAK® package with small size and low 1.07mm profile
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- 100% Rg tested
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- 100% UIS tested
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- Halogen-free
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- -50 to 150°C Operating temperature range