IRFR9210PBF

VISHAY  IRFR9210PBF.  晶体管, MOSFET, P沟道, -1.9 A, -200 V, 3 ohm, -10 V, -4 V

The is a third generation P-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The DPAK is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Power dissipation levels up to 1.5W are possible in typical surface-mount applications.

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Dynamic dV/dt rating

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Repetitive avalanche rated

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Surface-mount