PMPB95ENEA

NXP  PMPB95ENEA  晶体管, MOSFET, N沟道, 2.8 A, 80 V, 0.08 ohm, 10 V, 1.7 V

The is a N-channel enhancement-mode FET in a leadless medium power surface-mount plastic package using Trench MOSFET technology. It is suitable for use in relay driver, high-speed line driver, low-side load-switch and switching circuit applications.

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Small and leadless ultra thin SMD plastic package

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Exposed drain pad for excellent thermal conduction

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Tin-plated 100% solderable side pads for optical solder inspection

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AEC-Q101 qualified

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Low threshold voltage

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-55 to 150°C Junction temperature range