MRF6S19060NBR1
MOSFET RF N-CH 28V 12W TO272-4
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for N-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications.
• Typical 2-Carrier N-CDMA Performance: VDD = 28 Volts,
IDQ = 610 mA, Pout = 12 Watts Avg., Full Frequency Band, IS-95 CDMA
Pilot, Sync, Paging, Traffic Codes 8 Through 13 Channel Bandwidth =
1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 16 dB
Drain Efficiency — 26%
IM3 @ 2.5 MHz Offset — -37 dBc in 1.2288 MHz Bandwidth
ACPR @ 885 kHz Offset — -51 dBc in 30 kHz Bandwidth
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 60 Watts CW Output Power
Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications
• 200°C Capable Plastic Package
• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.