BSS306NH6327XTSA1

INFINEON  BSS306NH6327XTSA1  晶体管 双极预偏置/数字, BRT, SOT-23

OptiMOS™2 功率 MOSFET 系列

Infineon

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* OptiMOS™2** N 通道系列提供行业最低电压接地电阻。 功率 MOSFET 系列可用于很多应用，包括高频电信、数据通信、太阳能、低电压驱动器和服务器电源。 **OptiMOS 2** 产品系列具有 20V 及以上范围，且提供不同的封装类型可供选择。

得捷:
MOSFET N-CH 30V 2.3A SOT23-3

欧时:
Infineon OptiMOS 2 系列 Si N沟道 MOSFET BSS306NH6327XTSA1, 2.3 A, Vds=30 V, 3引脚 SOT-23封装

e络盟:
功率场效应管, MOSFET, BRT, N沟道, 30 V, 2.3 A, 0.044 ohm, SOT-23, 表面安装

艾睿:
If you need to either amplify or switch between signals in your design, then Infineon Technologies&s; BSS306NH6327XTSA1 power MOSFET is for you. Its maximum power dissipation is 500 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes optimos technology.

安富利:
Trans MOSFET N-CH 30V 2.3A 3-Pin SOT-23 T/R

TME:
Transistor: N-MOSFET; unipolar; 30V; 2.3A; 0.5W; SOT23

Verical:
Trans MOSFET N-CH 30V 2.3A Automotive 3-Pin SOT-23 T/R

Newark:
# INFINEON  BSS306NH6327XTSA1  Bipolar Pre-Biased / Digital Transistor, BRT, SOT-23