BUK78150-55A

NXP  BUK78150-55A  晶体管, MOSFET, N沟道, 5.5 A, 55 V, 150 mohm, 10 V, 3 V

The is a N-channel standard level enhancement-mode FET in a plastic package using TrenchMOS® technology. The device has been designed and qualified to the appropriate AEC-Q101 standard for use in automotive critical applications.

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Low conduction losses due to low ON-state resistance

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Suitable for standard level gate drive sources

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-55 to 150°C Junction temperature range