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AUIRF2805STRR

MOSFET AUTO 55V 1 N-CH HEXFET 4.7mOhms

Description

Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs

utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

Features

Advanced Planar Technology

Low On-Resistance

Dynamic dV/dT Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Repetitive Avalanche Allowed up to Tjmax

Lead-Free, RoHS Compliant

Automotive Qualified
.

AUIRF2805STRR PDF数据文档
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