MRF8S9120NR3

RF Power Transistor,865 to 960MHz, 120W, Typ Gain in dB is 19.8 @ 960MHz, 28V, LDMOS, SOT1823

Overview

The is designed for CDMA base station applications with frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

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## Features

* 100% PAR Tested for Guaranteed Output Power Capability

* Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters

* Internally Matched for Ease of Use

* Integrated ESD Protection

* Greater Negative Gate-Source Voltage Range for Improved Class C Operation

* Designed for Digital Predistortion Error Correction Systems

* Optimized for Doherty Applications

* 225°C Capable Plastic Package

* RoHS Compliant

* In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13-inch Reel.

## Features RF Performance Tables

### 900 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 800 mA, Pout = 33 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

* | **ACPR

dBc

.

*

\---|---|---|---|---

920 MHz| 20.1| 34.6| 6.3| –37.2

940 MHz| 20.0| 34.3| 6.3| –37.3

960 MHz| 19.8| 34.2| 6.3| –37.4

* Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 120 Watts CW Output Power 3 dB Input Overdrive from Rated Pout, Designed for Enhanced Ruggedness

* Typical Pout @ 1 dB Compression Point ≃ 120 Watts CW

### 800 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 800 mA, Pout = 33 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

* | **ACPR

dBc

.

*

\---|---|---|---|---

865 MHz| 20.8| 35.0| 6.2| –37.1

880 MHz| 20.8| 35.0| 6.2| –37.5

895 MHz| 20.6| 34.8| 6.2| –38.0