IS61LV25616AL-10TL

INTEGRATED SILICON SOLUTION ISSI  IS61LV25616AL-10TL  芯片, 存储器, SRAM, 4MB, 10NS, TSOP-2-44

DESCRIPTION

The ISSI IS61LV25616AL is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. It is fabricated using ISSI"s high-performance CMOS technol ogy. This highly reliable process coupled with innovative circuit design techniques, yields high-performance andlow power consumption devices.

FEATURES

• High-speed access time:

   — 10, 12 ns

• CMOS low power operation

• Low stand-by power:

   — Less than 5 mA typ. CMOS stand-by

• TTL compatible interface levels

• Single 3.3V power supply

• Fully static operation: no clock or refresh required

• Three state outputs

• Data control for upper and lower bytes

• Industrial temperature available

• Lead-free available