IRFS654B

250V N沟道MOSFET 250V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using ’s proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.

Features

• 21A, 250V, RDSon = 0.14Ω @VGS = 10 V

• Low gate charge typical 95 nC

• Low Crss typical 60 pF

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability