T1G3000532-SM

射频结栅场效应晶体管RF JFET晶体管 .03-3.5GHz PAE 64.7% P3dB 5.7W @3GHz 32V

The TriQuint is a 5W P3dB, 50 ohm-input matched discrete GaN on SiC HEMT which operates from 30MHz to 3.5 GHz. The device is constructed with TriQuint"s proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. Lead-free and ROHS compliant.