APT150GN60JDQ4

功率半导体功率模块 Power Semiconductors Power Modules

This powerful and secure IGBT transistor from will make sure your circuit works properly. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 536000 mW. It is made in a single dual emitter configuration. This IGBT transistor has an operating temperature range of -55 °C to 175 °C.