IGB15N60TATMA1
INFINEON IGB15N60TATMA1 单晶体管, IGBT, 15 A, 2.05 V, 130 W, 600 V, TO-263, 3 引脚
The IGB15N60T is a Low Loss IGBT in TRENCHSTOP™ and field-stop technology. The TRENCHSTOP™ IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of Trench top-cell and filed stop concept. Combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-ON losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
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- Lowest Vce sat drop for lower conduction losses
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- Low switching losses
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- Easy parallel switching capability due to positive temperature coefficient in Vce sat
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- Very soft and fast recovery anti-parallel emitter controlled diode
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- High ruggedness, temperature stable behaviour
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- Low EMI emissions
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- Low gate charge
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- Very tight parameter distribution
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- Highest efficiency - Low conduction and switching losses
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- High device reliability
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- 5µs Short-circuit withstand time
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- Green product
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- Halogen-free