IPD26N06S2L35ATMA2

晶体管, MOSFET, N沟道, 30 A, 55 V, 0.027 ohm, 10 V, 1.6 V

Summary of Features:

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• N-channel - Enhancement mode

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• Automotive AEC Q101 qualified

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• MSL1 up to 260°C peak reflow

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• 175°C operating temperature

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• Green package lead free

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• Ultra low Rdson

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• 100% Avalanche tested

Benefits:

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world"s lowest RDS at 55V on  in planar technology

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highest current capability

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lowest switching and conduction power losses for highest thermal efficiency

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robust packages with superior quality and reliability

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Optimized total gate charge enables smaller driver output stages