4Mb,High-Speed/Low Power,Async,512K X 8,8ns/3.3V,or 10ns,2.4V-3.6V,36 Ball MBGA 8x10 Mm, Leadfree
SRAM - Asynchronous Memory IC 4Mb 512K x 8 Parallel 10ns 36-TFBGA 6x8
得捷:
IC SRAM 4MBIT PARALLEL 36TFBGA
立创商城:
IS61WV5128BLL 10BLI TR
艾睿:
SRAM Chip Async Single 2.5V/3.3V 4M-Bit 512K x 8 10ns 36-Pin Mini-BGA T/R
安富利:
SRAM Chip Async Single 2.5V/3.3V 4M-Bit 512K x 8 10ns 36-Pin Mini-BGA T/R
| 图片 | 型号 | 厂商 | 下载 |
|---|---|---|---|
 | IS61WV5128BLL-10BLI-TR | Integrated Silicon SolutionISSI | |
 | IS61LV256AL-10TL | Integrated Silicon SolutionISSI | |
 | IS61WV6416BLL-12TL | Integrated Silicon SolutionISSI | |
| IS61C1024-15J | Integrated Silicon SolutionISSI | |
| IS61LV256-15T | ICSI 矽成 | |
 | IS61C1024AL-12TI | Integrated Silicon SolutionISSI | |
 | IS61C6416AL-12TI | Integrated Silicon SolutionISSI | |
 | IS61LV6416-10TI | Integrated Silicon SolutionISSI | |
 | IS61WV25616BLL-10BI-TR | Integrated Silicon SolutionISSI | |
 | IS61WV25616BLL-10BI | Integrated Silicon SolutionISSI | |
 | IS61WV5128BLL-10BI | Integrated Silicon SolutionISSI |
