TE28F010-90

28F010 1024K 128K X 8 CMOS FLASH MEMORY

’s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F010 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer socket; on board during subassembly test; in-system during final test; and in-system after sale. The 28F010 increases memory flexibility, while contributing to time and cost savings.

 Flash Electrical Chip-Erase

 1 Second Typical Chip-Erase

 Quick-Pulse Programming Algorithm

 10 µs Typical Byte-Program

 2 Second Chip-Program

 100,000 Erase/Program Cycles

 12.0 V ±5% VPP

 High-Performance Read

 90 ns Maximum Access Time

 CMOS Low Power Consumption

 10 mA Typical Active Current

 50 µA Typical Standby Current

 0 Watts Data Retention Power

 Integrated Program/Erase Stop Timer

 Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface

 Noise Immunity Features

 ±10% VCC Tolerance

 Maximum Latch-Up Immunity through EPI Processing

 ETOX™ Nonvolatile Flash Technology

 EPROM-Compatible Process Base

 High-Volume Manufacturing Experience

 JEDEC-Standard Pinouts

 32-Pin Plastic Dip

 32-Lead PLCC

 32-Lead TSOP

   See Packaging Spec., Order #231369

 Extended Temperature Options