SI5908DC-T1-E3

VISHAY  SI5908DC-T1-E3  双路场效应管, MOSFET, 双N沟道, 4.4 A, 20 V, 0.032 ohm, 4.5 V, 1 V

The is a dual N-channel MOSFET housed in a surface-mount package. It is suitable for load, battery and PA switch applications.

.

TrenchFET® power MOSFET

.

Ultra low RDS ON

.

Excellent power handling in compact footprint

艾睿:
Trans MOSFET N-CH 20V 4.4A 8-Pin Chip FET T/R

安富利:
Trans MOSFET N-CH 20V 4.4A 8-Pin Chip FET T/R

Newark:
# VISHAY  SI5908DC-T1-E3  Dual MOSFET, Dual N Channel, 4.4 A, 20 V, 0.032 ohm, 4.5 V, 400 mV

力源芯城:
20V,5.9A,双N沟道MOSFET