SUD19N20-90-E3
VISHAY SUD19N20-90-E3 晶体管, MOSFET, N沟道, 19 A, 200 V, 90 mohm, 10 V, 4 V
The is a 200VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for primary side switch applications.
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- 100% Rg tested
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- PWM optimized
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- 175°C Junction temperature
艾睿:
Trans MOSFET N-CH 200V 19A 3-Pin2+Tab DPAK
安富利:
Trans MOSFET N-CH 200V 19A 3-Pin2+Tab DPAK
富昌:
单 N 沟道 200 V 0.09 Ohms 表面贴装 功率 Mosfet - TO-252
Chip1Stop:
Trans MOSFET N-CH 200V 19A 3-Pin2+Tab DPAK
Verical:
Trans MOSFET N-CH 200V 19A 3-Pin2+Tab DPAK
Newark:
# VISHAY SUD19N20-90-E3 MOSFET Transistor, N Channel, 19 A, 200 V, 90 mohm, 10 V, 4 V
