锐单电子商城 , 一站式电子元器件采购平台!
  • 电话:400-990-0325

PD57006STR-E

RF功率晶体管, LDMOST塑料家族的N沟道增强模式,横向MOSFET的 RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

This RF amplifier from STMicroelectronics is a semiconductor-based transistor that amplifies or switches electronic signals and electrical power in a circuit. Its maximum power dissipation is 20000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This RF power MOSFET has an operating temperature range of -65 °C to 165 °C. Its maximum frequency is 945 MHz. This N channel RF power MOSFET operates in enhancement mode.

PD57006STR-E PDF数据文档
图片 型号 厂商 下载
PD57006STR-E ST Microelectronics 意法半导体
PD57002-E ST Microelectronics 意法半导体
PD57006S-E ST Microelectronics 意法半导体
PD57006-E ST Microelectronics 意法半导体
PD57030-E ST Microelectronics 意法半导体
PD57060-E ST Microelectronics 意法半导体
PD57070-E ST Microelectronics 意法半导体
PD57060S-E ST Microelectronics 意法半导体
PD57045TR-E ST Microelectronics 意法半导体
PD57018STR-E ST Microelectronics 意法半导体
PD57030S-E ST Microelectronics 意法半导体