APT35GP120BG

功率MOS 7® IGBT POWER MOS 7® IGBT

The IGBT transistor from will work effectively even with higher currents. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 543000 mW. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.