VSML3710-GS08

VISHAY  VSML3710-GS08  红外发射器, 高功率, 60 °, LCC, 100 mA, 1.35 V, 800 ns, 800 ns

The is a 940nm Infrared Emitting Diode in GaAlAs multi quantum well MQW technology. It is moulded in a PLCC-2 package for surface mounting SMD.

.

High reliability

.

High radiant power

.

High radiant intensity

.

ϕ = ±60° Angle of half sensitivity

.

Low forward voltage

.

Suitable for high pulse current operation

.

Good spectral matching with Si photodetectors