IRFU120PBF

VISHAY  IRFU120PBF.  晶体管, MOSFET, N沟道, 7.7 A, 100 V, 270 mohm, 10 V, 4 V

The is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The straight lead version is for through-hole mounting applications. Power dissipation levels up to 1.5W are possible in typical surface-mount applications.

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Dynamic dV/dt rating

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Ease of paralleling

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Straight lead

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Repetitive avalanche rated