ST13003DN

Trans GP BJT NPN 400V 1A 3Pin3+Tab SOT-32 Bag

The three terminals of this NPN GP BJT from STMicroelectronics give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor"s maximum emitter base voltage is 9 V. Its maximum power dissipation is 20000 mW. It has a maximum collector emitter voltage of 400 V and a maximum emitter base voltage of 9 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.