2N5666

每NPN功率硅开关晶体管合格MIL -PRF- 455分之19500 NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/455

NPN POWER SILICON SWITCHING TRANSISTOR

Qualified per MIL-PRF-19500/455

艾睿:
The three terminals of this NPN 2N5666 GP BJT from Microsemi give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 1200 mW. It has a maximum collector emitter voltage of 200 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.

Verical:
Trans GP BJT NPN 200V 5A 1200mW 3-Pin TO-5 Bag