2N4124-AP

TO-92 NPN 25V 0.2A

The NPN general purpose bipolar junction transistor, developed by , is the perfect solution for your high-current density needs. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 625 mW. It has a maximum collector emitter voltage of 25 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.