AO6401

P沟道增强型场效应晶体管概述AO6401采用先进沟道技术，提供优良的RDS（ON），低栅极电荷和操作与栅极电压低至2.5V。这个装置是适合用于作为负载开关或PWM应用。标准产品AO6401是无铅（符合ROHS＆索尼259规..

最大源漏极电压VdsDrain-Source Voltage | -30 \---|--- 最大栅源极电压Vgs±Gate-Source Voltage | 12V 最大漏极电流IdDrain Current | -5A 源漏极导通电阻RdsDrain-Source On-State Resistance | 81mΩ@ VGS = -2.5V,ID = -1A 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.7~-1.3V 耗散功率PdPower Dissipation | 2W Description & Applications | P-Channel Enhancement Mode Field Effect Transistor General Description The uses advanced trench technology to provide excellent RDSON, low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard Product AO6401 is Pb-free meets ROHS & Sony 259 specifications. AO6401L is a Green Product ordering option. AO6401 and AO6401L are electrically identical. 描述与应用 | P沟道增强型场效应 概述 AO6401采用先进沟道技术，提供优良的RDS（ON），低栅极电荷和操作与栅极电压低至2.5V。这个装置是适合用于作为负载开关或PWM应用。标准产品AO6401是无铅（符合ROHS＆索尼259规格）。 AO6401L是一种绿色产品订购选项。 AO6401和AO6401L是电相同。