RFP50N06

FAIRCHILD SEMICONDUCTOR  RFP50N06  晶体管, MOSFET, N沟道, 50 A, 60 V, 22 mohm, 10 V, 4 V

The is a 60V N-channel power MOSFET using MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. The MOSFET is designed for applications such as switching regulators, switching converters, motor drivers and relay drivers. This transistor can be operated directly from integrated circuits. This product is general usage and suitable for many different applications.

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Temperature compensating PSPICE® model

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Peak current vs. pulse width curve

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UIS Rated curve

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175°C Rated junction temperature