RF5110G

RFMD  RF5110G  芯片, 射频放大器, 800-950MHZ, 3V, 16QFN

The is a high-power high-gain high-efficiency Power Amplifier. The device is manufactured on an advanced GaAs HBT process and has been designed for use as the final RF amplifier in GSM hand-held equipment in the 900MHz band and general purpose radio applications in standard sub-bands from 150 to 960MHz. On-board power control provides over 70dB of control range with an analogue voltage input and allows for power down with a logic "low" in standby operation. The device is self-contained with 50R input and the output can be easily matched to obtain optimum power and efficiency characteristics.

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General purpose - 32dBm output power, 53% efficiency

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GSM - 32dB gain with analogue gain control, 57% efficiency

ESD sensitive device, take proper precaution while handling the device.