RN47A3JE

RN47A3JE NPN+PNP复合带阻尼三极管 50V/-50V 100mA/-100mA HEF=50 R1=R2=10KΩ 100mW/0.1W SOT-553/ESV 标记23 开关电路 逆变器 接口电路 驱动电路

集电极-基极反向击穿电压VBRCBO Collector-Base VoltageVCBO | 50V/-50V \---|--- 集电极-发射极反向击穿电压VBRCEO Collector-Emitter VoltageVCEO | 50V/-50V 集电极连续输出电流IC Collector CurrentIC | 100mA/-100mA Q1基极输入电阻R1 Input ResistanceR1 | 10KΩ/Ohm Q1基极-发射极输入电阻R2 Base-Emitter ResistanceR2 | 10KΩ/Ohm Q1电阻比R1/R2 Q1 Resistance Ratio | 1 Q2基极输入电阻R1 Input ResistanceR1 | 10KΩ/Ohm Q2基极-发射极输入电阻R2 Base-Emitter ResistanceR2 | 10KΩ/Ohm Q2电阻比R1/R2 Q2 Resistance Ratio | 1 直流电流增益hFE DC Current GainhFE | 50 截止频率fT Transtion FrequencyfT | 250MHz/200MHz 耗散功率Pc Power Dissipation | 100mW/0.1W Description & Applications | Features • TOSHIBA Transistor Silicon NPN

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PNP Epitaxial Type PCT process Bias Resistor built-in Transistor • Two devices are incorporated into an Extreme-Super-Mini 5 pin package. • Incorporating a bias resistor into a transistor reduces parts count.Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. Applications • Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. 描述与应用 | 特点 • 晶体管的硅NPN*PNP外延型的（PCT程序）（偏置电阻晶体管） •两个设备都纳入一个极端超小型（5针）封装。 •将偏置电阻晶体管，减少了部件数量。减少零件数，使制造比以往更紧凑的设备和装配成本。 应用 •开关，逆变电路，接口电路和驱动器电路应用