锐单电子商城 , 一站式电子元器件采购平台!
  • 电话:400-990-0325

IXFN100N50P

IXYS SEMICONDUCTOR  IXFN100N50P  晶体管, MOSFET, 极性FET, N沟道, 100 A, 500 V, 49 mohm, 10 V, 5 V

底座安装 N 通道 500 V 90A(Tc) 1040W(Tc) SOT-227B


得捷:
MOSFET N-CH 500V 90A SOT-227B


贸泽:
MOSFET 500V 100A


艾睿:
Compared to traditional transistors, IXFN100N50P power MOSFETs, developed by Ixys Corporation, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 1040000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with hiperfet technology.


TME:
Module; single transistor; Uds:500V; Id:75A; SOT227B; 1.04kW


Verical:
Trans MOSFET N-CH 500V 90A 4-Pin SOT-227B


Newark:
# IXYS SEMICONDUCTOR  IXFN100N50P  MOSFET Transistor, PolarFET, N Channel, 90 A, 500 V, 49 mohm, 10 V, 5 V


Win Source:
MOSFET N-CH 500V 90A SOT-227B


IXFN100N50P PDF数据文档
图片 型号 厂商 下载
IXFN100N50P IXYS Semiconductor
IXFN100N10S2 IXYS Semiconductor
IXFN100N10S3 IXYS Semiconductor
IXFN48N55 IXYS Semiconductor
IXFN150N15 IXYS Semiconductor
IXFN48N50U3 IXYS Semiconductor
IXFN48N50U2 IXYS Semiconductor
IXFN150N10 IXYS Semiconductor
IXFN44N50U3 IXYS Semiconductor
IXFN44N50U2 IXYS Semiconductor
IXFN200N07 IXYS Semiconductor