FS800R07A2E3_B31
IGBT模块
Summary of Features:
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- Increased blocking voltage capability to 680V
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- High Current Density
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- Low inductive design
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- Low Switching Losses
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- Trench IGBT 3
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- Tvj op = 175°C max 10 sec
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- Tvj op = 150°C continuously
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- Current rating up to 800A
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- VCEsat improved by 100mV compared to standard HP2
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- 2.5 kV AC 1min Insulation
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- Direct Cooled Base Plate
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- High Power Density
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- Integrated NTC temperature sensor
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- Isolated Base Plate
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- Copper Base Plate
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- RoHS compilant
Benefits:
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- Cost efficient system approach
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- High efficiency due to low power losses
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- High reliability
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- Compact design
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- HybridKIT 2 Enhanced reference design available
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- Very High Power Density