STH315N10F7-2

STMICROELECTRONICS  STH315N10F7-2  晶体管, MOSFET, N沟道, 180 A, 100 V, 0.0021 ohm, 10 V, 3.5 V

表面贴装型 N 通道 100 V 180A（Tc） 315W（Tc） H2Pak-2

得捷:
MOSFET N-CH 100V 180A H2PAK-2

e络盟:
STMICROELECTRONICS  STH315N10F7-2  晶体管, MOSFET, N沟道, 180 A, 100 V, 0.0021 ohm, 10 V, 3.5 V

艾睿:
Create an effective common drain amplifier using this STH315N10F7-2 power MOSFET from STMicroelectronics. Its maximum power dissipation is 315000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with stripfet technology.

安富利:
Trans MOSFET N-CH 100V 180A 3-Pin H2PAK T/R

Verical:
Trans MOSFET N-CH 100V 180A Automotive 3-Pin2+Tab H2PAK T/R

Win Source:
MOSFET N-CH 100V 180A H2PAK-2