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NJVMJD117T4G

达林顿晶体管 BIP PNP 2A 100V TR

The Darlington Bipolar Power Transistor is designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. The MJD112 NPN and MJD117 PNP are complementary devices.

Features

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Lead Formed for Surface Mount Applications in Plastic Sleeves No Suffix
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Straight Lead Version in Plastic Sleeves "1" Suffix
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Lead Formed Version in 16 mm Tape and Reel "T4" Suffix
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Surface Mount Replacements for TIP110-TIP117 Series
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Monolithic Construction With Built-in Base-Emitter Shunt Resistors
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High DC Current Gain hFE = 2500 Typ @ IC = 2.0 Adc
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Complementary Pairs Simplifies Designs
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NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
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PbFree Packages are Available

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NJVMJD117T4G ON Semiconductor 安森美
NJVMJD50T4G ON Semiconductor 安森美