IRFB260NPBF

N沟道,200V,56A,40mΩ@10V

SMPS MOSFET

VDSS   RDSon max   ID

200V   0.040Ω           56A

Benefits

Low Gate-to-Drain Charge to Reduce Switching Losses

Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001

Fully Characterized Avalanche Voltage and Current

High frequency DC-DC converters

Applications

Lead-Free

e络盟:
场效应管, MOSFET, N沟道, 200V, 56A, TO-220AB

艾睿:
Trans MOSFET N-CH 200V 56A 3-Pin3+Tab TO-220AB Tube

Allied Electronics:
MOSFET, Power; N-Ch; VDSS 200V; RDSON 0.04Ohm; ID 56A; TO-220AB; PD 380W; VGS +/-20V

Jameco:
NEL HEXFET POWER MOSFET IN A S

Verical:
Trans MOSFET N-CH 200V 56A 3-Pin3+Tab TO-220AB Tube