AFT09S200W02NR3

RF Power Transistor,716 to 960MHz, 200W, Typ Gain in dB is 19.2 @ 960MHz, 28V, LDMOS, SOT1823

Overview

The and AFT09S200W02GNR3 56 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 716 to 960 MHz.

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## Features

* Designed for Wide Instantaneous Bandwidth Applications

* Greater Negative Gate-Source Voltage Range for Improved Class C Operation

* Able to Withstand Extremely High Output VSWR and Broadband Operating Conditions

* Optimized for Doherty Applications

* RoHS Compliant

* In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13-inch Reel.

## Features RF Performance Tables

### 900 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 1400 mA, Pout = 56 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

* | **ACPR

dBc

.

* | **IRL

dB

.

*

\---|---|---|---|---|---

920 MHz| 19.2| 34.0| 6.9| –35.7| –25

940 MHz| 19.3| 35.1| 7.0| –36.0| –20

960 MHz| 19.2| 36.5| 6.8| –34.8| –13

### 700 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 1400 mA, Pout = 56 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

* | **ACPR

dBc

.

* | **IRL

dB

.

*

\---|---|---|---|---|---

716 MHz| 22.7| 37.5| 6.9| –34.7| –18

722 MHz| 22.6| 37.2| 6.9| –34.6| –19

728 MHz| 22.5| 36.9| 6.9| –34.6| –18